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INTERNSHIP DETAILS

Masterthesis: GaN-Based RF Power Devices & Circuits

CompanyFraunhofer-Gesellschaft

LocationFreiburg im Breisgau

Work ModeOn Site

PostedApril 15, 2026

Internship Information

Core Responsibilities

The master thesis will focus on GaN power electronics, specifically in RF power devices and circuits. Topics include high-power amplifiers, integrated power amplifiers, and the design and optimization of active devices.

Internship Type

full time

Company Size

287

Visa Sponsorship

Language

English

Working Hours

40 hours

Apply Now →

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About The Company

Fraunhofer IGD is the international leading institute for applied research in visual computing. Visual computing is image- and model-based information technology and includes computer graphics and computer vision, as well as virtual and augmented reality. In simple terms, the Fraunhofer researchers in Darmstadt, Rostock, and Kiel are turning information into images and extracting information from images. In cooperation with its partners, technical solutions and market-relevant products are created. Prototypes and integrated solutions are developed in accordance with customized requirements. In doing so, Fraunhofer IGD places users at the forefront, providing them with technical solutions to facilitate computer work and make it more efficient. Owing to its numerous innovations, Fraunhofer IGD raises man-machine interaction to a new level. Man is able to work in a more result-oriented and effective way by means of the computer and visual computing developments.

About the Role

At the Fraunhofer Institute for Applied Solid State Physics IAF we know our technologies like the back of our hand. Because we are one of the few scientific institutions worldwide to conduct research along the entire semiconductor value chain and on tailor-made synthetic diamonds. Whether high-frequency circuits for communications technology, voltage converter modules for electromobility, laser systems for measurement processes, or innovative hardware and software for quantum computers and quantum sensors: we develop tomorrow’s technology in-house for a sustainable and secure society. When will you join us?

In our microelectronics department we offer a master thesis in the field of GaN power electronics.

What you do:

Master’s thesis topics in the area of RF power devices and circuits are based on our in-house GaN HEMT technologies and reflect our research interests, which currently include the following areas:

Packaged / integrated high-power amplifiers with output power levels in the kW-range.
Integrated power amplifiers (e.g. Doherty PAs, Wideband PAs) for SatCom or 5G/6G.
Multi-functional transceiver MMICs and their individual building blocks (e.g., LNAs, PAs, mixers, frequency multipliers, phase shifters, attenuators, power detectors, …).
Design and optimization of active devices (diodes, HEMTs) for emerging applications and frequency bands.
Characterization and thermal / electrical modeling of active and passive devices.

What you bring along:

Enrolled student in a physics, electrical engineering or a comparable Master programme
Interest in challenging scientific content from experiment and theory
Enjoyment of scientific work
Ability to work in a team, openness and motivation to work independently and purposefully

What we offer:

Personal support on an equal footing and assistance from experienced scientists and professionals throughout your thesis
Modern laboratory equipment in a new laboratory building
Flexible working hours that fit your studies
Collaboration in an interdisciplinary team, including participation in current projects with clear objectives
An open and team-oriented corporate culture that allows you to contribute your own ideas
Diverse and exciting tasks in the environment of an internationally renowned research institution
Free parking garage with e-charging stations, as well as a Frelo station (bike rental system) and a bus stop directly at the institute

The position is initially limited to 6 month. The monthly working time is 40 hours.

Ready for a change? Then apply now and make a difference! After sending your online application, you will receive an automatic confirmation of receipt. We will get back to you as soon as possible and let you know how we will proceed. Do you habe questions about the position, the application process, or accessibility? Do you need support? Our recruiter Maria Boerner is here for you: recruiting@iaf.fraunhofer.de, phone +49 761 5159-195.
You can find more accessible information here: Working with disabilities at Fraunhofer IAF - Fraunhofer IAF.

We value and promote the diversity of our employees' skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, as well as sexual orientation and identity. Severely disabled individuals will be given preference if equally qualified.
Our tasks are diverse and adaptable - for applicants with disabilities, we will jointly find solutions that optimally promote your abilities. The same applies if you do not meet all profile requirements due to a disability.

You can learn more about the Fraunhofer Institute for Applied Solid State Physics here: www.iaf.fraunhofer.de

Fraunhofer Institute for Applied Solid State Physics IAF
Human Resources
Tullastrasse 72
79108 Freiburg

Kennziffer: 78402 Bewerbungsfrist:

Key Skills

GaN Power ElectronicsRF Power DevicesHigh-Power AmplifiersIntegrated Power AmplifiersTransceiver MMICsDevice CharacterizationThermal ModelingElectrical ModelingTeamworkScientific WorkIndependent WorkOptimizationExperimentationTheory